Electron spin resonance and optical characterization of defects in microcrystalline silicon
نویسندگان
چکیده
Electron spin resonance (ESR), constant photocurrent method (CPM), photothermal de ̄ection spectroscopy (PDS), Raman and IR spectroscopy have been used to measure microcrystalline silicon ®lms. Besides standard defects with a g-value of 2.0055, new defects with a g-value 2.0030 have been created during annealing this material. Proportionality between the subgap optical absorption and ESR spin density has been observed.
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